Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Overview

This article discusses the growth of epitaxial films of magnesium nitrite and zinc nitrite using plasma-assisted molecular beam epitaxy (MBE). The films are grown on MgO substrates with N2 gas as the nitrogen source, and the process is monitored optically.

Key Study Components

Area of Science

• Semiconductor materials
• Epitaxial growth techniques
• Plasma-assisted molecular beam epitaxy

Background

• Magnesium nitrite and zinc nitrite are II-V compound semiconductors.
• This class of semiconductors is relatively unexplored.
• They possess an anti-bixbyite crystal structure.
• The conventional cube unit cell contains 80 atoms.

Purpose of Study

• To demonstrate the growth of epitaxial films using MBE.
• To explore the properties of magnesium nitrite and zinc nitrite semiconductors.
• To provide insights into the growth process and its monitoring.

Methods Used

• Plasma-assisted molecular beam epitaxy (MBE) system.
• Use of MgO substrates for film growth.
• N2 gas as the nitrogen source.
• Optical growth monitoring techniques.

Main Results

• Successful growth of epitaxial films of magnesium nitrite and zinc nitrite.
• Demonstration of the MBE process in a VG V80 system.
• Characterization of the films' structural properties.
• Insights into the anti-bixbyite crystal structure of the materials.

Conclusions

• The study successfully demonstrates the growth of II-V compound semiconductors.
• Optical monitoring is effective for tracking film growth.
• This research contributes to the understanding of unexplored semiconductor materials.

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